Study of Thermal Stress Effect on Rapid Thermal Ultra-thin Gate Oxides
碩士 === 國立臺灣大學 === 電子工程學研究所 === 91 === Abstract With the ability to perform heat cycles on a wafer rapidly and with low thermal budget, RTP has become a key technology in the fabrication of advanced semiconductor devices. However, the most common criticisms of RTP are about the...
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06524433193983632747 |