Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 91 === (Ta2O5)0.92-(TiO2)0.08 thin films with a thickness of 550 Å were deposited on p-Si (100) substrate by RF sputtering at 400℃. Before deposited (Ta2O5)0.92-(TiO2)0.08 thin films, the native oxide on Si substrate removed by Ar plasma treatment. Si3N4 and SiN...
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ndltd-TW-091YUNT53931622016-06-10T04:15:27Z http://ndltd.ncl.edu.tw/handle/18086239576193242755 Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter 以RF磁控濺鍍法研製(TiO2)0.08-(Ta2O5)0.92閘極介電層之研究 Chun-Hsiung Chen 陳俊雄 碩士 國立雲林科技大學 電子與資訊工程研究所碩士班 91 (Ta2O5)0.92-(TiO2)0.08 thin films with a thickness of 550 Å were deposited on p-Si (100) substrate by RF sputtering at 400℃. Before deposited (Ta2O5)0.92-(TiO2)0.08 thin films, the native oxide on Si substrate removed by Ar plasma treatment. Si3N4 and SiNO very thin layers will be grown by using N2-plasma to bombard heated Si-substrate or sputtering system with Si3N4 target. The Si3N4 and SINO layers might be as barrier to forbid out-diffusion of oxygen and silicon atoms to promote the MIS performance. To compare among these samples, the dielectric for a film after Ar plasma treatment 5 minutes , N2 plasma treatment 10 minutes and furnace annealed at 650℃ increased to 68 and its leakage current density lowered to 3.03 × 10-9 A/cm2 at 1.5V. The dominant leakage mechanisms are the Schottky Emission at low electric field and the Poole-Frenkel at high electric field. none 陳世志 2003 學位論文 ; thesis 125 zh-TW |
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碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 91 === (Ta2O5)0.92-(TiO2)0.08 thin films with a thickness of 550 Å were deposited on p-Si (100) substrate by RF sputtering at 400℃. Before deposited (Ta2O5)0.92-(TiO2)0.08 thin films, the native oxide on Si substrate removed by Ar plasma treatment. Si3N4 and SiNO very thin layers will be grown by using N2-plasma to bombard heated Si-substrate or sputtering system with Si3N4 target. The Si3N4 and SINO layers might be as barrier to forbid out-diffusion of oxygen and silicon atoms to promote the MIS performance.
To compare among these samples, the dielectric for a film after Ar plasma treatment 5 minutes , N2 plasma treatment 10 minutes and furnace annealed at 650℃ increased to 68 and its leakage current density lowered to 3.03 × 10-9 A/cm2 at 1.5V. The dominant leakage mechanisms are the Schottky Emission at low electric field and the Poole-Frenkel at high electric field.
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none Chun-Hsiung Chen 陳俊雄 |
author |
Chun-Hsiung Chen 陳俊雄 |
spellingShingle |
Chun-Hsiung Chen 陳俊雄 Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter |
author_sort |
Chun-Hsiung Chen |
title |
Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter |
title_short |
Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter |
title_full |
Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter |
title_fullStr |
Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter |
title_full_unstemmed |
Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter |
title_sort |
study of (tio2)0.08- (ta2o5)0.92 gate dielectric by rf sputter |
publishDate |
2003 |
url |
http://ndltd.ncl.edu.tw/handle/18086239576193242755 |
work_keys_str_mv |
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