Characterizations of GaAs films on Si substrates grown by Metal Organic Chemical Vapor Deposition
碩士 === 中原大學 === 電子工程研究所 === 92 === In this study, we use heteroepitaxial growth technology to grow high quality GaAs single crystal films on Si substrates. All the layers were grown by home-made atmospheric pressure metalorganic chemical vapor deposition. However, the major problem for the growth of...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wjrv3y |