High Reflectance ZnTe/ZnSe Distributed Bragg Reflector at 570nm Grown by Molecular Beam Epitaxy
碩士 === 中原大學 === 應用物理研究所 === 92 === ZnTe/ZnSe distributed Bragg reflector (DBR) with 98% reflectance was grown on GaAs (001) by molecular beam epitaxy (MBE). The center of the stop band was designed at 570nm. The reflectivity spectrum was simulated using the dielectric model and the matrix method in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14081414757088789256 |