Study on Electrical Properties of Cu Interconnect after Post CMP Cleaning

碩士 === 國立交通大學 === 電子工程系所 === 92 === Although Cu CMP has being the enabling technology for multilevel Cu interconnect manufacturing, there were several challenges to its implementation. One of the serious challenges was post-Cu CMP cleaning. There will be a large amount of contaminants on the wafers...

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Bibliographic Details
Main Authors: Hsueh Kuo-Chin, 薛國欽
Other Authors: Yeh Ching-Fa
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/u6789j