Design of Millimeter-wave Frequency Doubler and New Broadband Switches using InGaAs pHEMT

• Main Authors: Yang-Yu Chen, 陳揚裕
• Other Authors: Shyh-Jong Chung
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/4akp8d

碩士 === 國立交通大學 === 電信工程系所 === 92 === Two kinds of MMIC circuits using InGaAs pHEMT are exhibited in this thesis, including a 35-to-70 GHz millimeter-wave frequency doubler and two broadband switches. First, the design methodology of the frequency multiplier is fully described. The class B operation was employed to achieve the 35-to-70 GHz frequency doubler with measured maximally conversion gain of -8.4 dB for 1 dBm input power. This design has 1 GHz bandwidth centered at 35 GHz for a flat conversion gain. Secondly, the design methodology of broadband millimeter-wave switches is shown in detail, along with the demonstrations of a 24-to-65 GHz SPST switch and a 30.5-to-64.5 GHz SPDT switch. For the designed 24-to-65 GHz SPST switch, the measured insertion loss is less than 3 dB and the isolation is better than 30 dB. It has 41 GHz bandwidth centered at 44.5 GHz for a flat insertion loss. For the design of 30.5-to-64.5 GHz SPDT switch, the measured insertion loss is less than 6 dB and the isolation is better than 30 dB with a total bandwidth of 34 GHz centered at 47 GHz for a flat insertion loss.