Design of SiGe BiCMOS 5GHz RF Receiver Front-End Circuits
碩士 === 國立交通大學 === 電信工程系所 === 92 === This thesis contents two works. First of all, we discuss the development of SiGe BiCMOS technology and the comparison between the SiGe and Si technologies. The first circuit, we implement a fully integrated 5.25GHz RF low noise amplifier, this circuit has a 8.3dB...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bb5f9f |