The study of silicide on Si/Si1-XGeX interface
碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, the focus is how to fabricate silicide with low resistance and smooth interface. The experimental results promise the potential of MOSFET application. First, we describe the common silicide about advantages and faults. In Ti-silicide, we use und...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27389976900784189946 |