The study of silicide on Si/Si1-XGeX interface

• Main Authors: Yong-Xiang Lin, 林詠祥
• Other Authors: Pei-Wen Li
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/27389976900784189946

碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, the focus is how to fabricate silicide with low resistance and smooth interface. The experimental results promise the potential of MOSFET application. First, we describe the common silicide about advantages and faults. In Ti-silicide, we use undoped、P-type and N-type Si-substrates. We analyze Ti-silicide resistance、interface and the element of composing in different RTA（raped thermal annealing） temperature and time. In Ni-silicide, we not only use undoped、P-type and N-type Si-substrates but also P-type and N-type SiGe-substrates. We analyze Ni-silicide resistance and interface in different RTA temperature and time in the same way.