The study of silicide on Si/Si1-XGeX interface
碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, the focus is how to fabricate silicide with low resistance and smooth interface. The experimental results promise the potential of MOSFET application. First, we describe the common silicide about advantages and faults. In Ti-silicide, we use und...
Main Authors: | Yong-Xiang Lin, 林詠祥 |
---|---|
Other Authors: | Pei-Wen Li |
Format: | Others |
Language: | zh-TW |
Published: |
2004
|
Online Access: | http://ndltd.ncl.edu.tw/handle/27389976900784189946 |
Similar Items
-
The study of silicide on Si/Si1-XGeX interface
by: Yong-Xiang Lin, et al.
Published: (2004) -
Influence of Germanium on Boron Activation in Si1-XGeX(X≦0.05) Using Scanning Capacitance Microscopy
by: Liu, Chung-Wen, et al.
Published: (2009) -
Study of nickel germano-silicide contact on Si1-xGex base
by: Chang Chai-wei, et al.
Published: (2003) -
Study on the fabrication method for Si1-xGex nanowires
by: Lin, Yu-Min, et al.
Published: (2010) -
The fabrication of Si1-xGex MOSFET
by: Ching-Chieh Shih, et al.
Published: (2003)