Study of Forming Si/Ge Quantum dots for Single-Electron Devices

碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process.

Bibliographic Details
Main Authors:	Shang-Wei Lin, 林上偉
Other Authors:	Pei-Wen Li
Format:	Others
Language:	zh-TW
Published:	2004
Online Access:	http://ndltd.ncl.edu.tw/handle/17073552506973351786

id	ndltd-TW-092NCU05442076
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spelling	ndltd-TW-092NCU054420762015-10-13T13:04:43Z http://ndltd.ncl.edu.tw/handle/17073552506973351786 Study of Forming Si/Ge Quantum dots for Single-Electron Devices 應用於單電子電晶體之矽/鍺量子點研製 Shang-Wei Lin 林上偉碩士國立中央大學電機工程研究所 92 In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process. Pei-Wen Li 李佩雯 2004 學位論文 ; thesis 89 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process.
author2	Pei-Wen Li
author_facet	Pei-Wen Li Shang-Wei Lin 林上偉
author	Shang-Wei Lin 林上偉
spellingShingle	Shang-Wei Lin 林上偉 Study of Forming Si/Ge Quantum dots for Single-Electron Devices
author_sort	Shang-Wei Lin
title	Study of Forming Si/Ge Quantum dots for Single-Electron Devices
title_short	Study of Forming Si/Ge Quantum dots for Single-Electron Devices
title_full	Study of Forming Si/Ge Quantum dots for Single-Electron Devices
title_fullStr	Study of Forming Si/Ge Quantum dots for Single-Electron Devices
title_full_unstemmed	Study of Forming Si/Ge Quantum dots for Single-Electron Devices
title_sort	study of forming si/ge quantum dots for single-electron devices
publishDate	2004
url	http://ndltd.ncl.edu.tw/handle/17073552506973351786
work_keys_str_mv	AT shangweilin studyofformingsigequantumdotsforsingleelectrondevices AT línshàngwěi studyofformingsigequantumdotsforsingleelectrondevices AT shangweilin yīngyòngyúdāndiànzidiànjīngtǐzhīxìduǒliàngzidiǎnyánzhì AT línshàngwěi yīngyòngyúdāndiànzidiànjīngtǐzhīxìduǒliàngzidiǎnyánzhì
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Study of Forming Si/Ge Quantum dots for Single-Electron Devices

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