Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage
碩士 === 國立中山大學 === 物理學系研究所 === 92 === We discove the decrement,comparing the Electroreflectance spectroscopy of theforward biased voltage is 0.5V after the photon energy is 1.8eV.We discuss the case from Asymptotic form and the sample.
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2004
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Online Access: | http://ndltd.ncl.edu.tw/handle/07986029650011013919 |
Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 92 === We discove the decrement,comparing the Electroreflectance spectroscopy of theforward biased voltage is 0.5V after the photon energy is 1.8eV.We discuss the case from Asymptotic form and the sample.
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