The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs
碩士 === 國立中山大學 === 物理學系研究所 === 92 === The electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy and light-hole transitions. In this work, we can get the dependence of surf...
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2004
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Online Access: | http://ndltd.ncl.edu.tw/handle/06231849050825084416 |
Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 92 === The electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy and light-hole transitions. In this work, we can get the dependence of surface electric field on external biased voltage from analyzing the Franz- Keldysh oscillations and the way of fast Fourier transform on condition that weakly modulated field, further more we can get the dependence of effective reduced mass on changed photon energy.
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