Influences of GaN Nucleation Layer on the Quality of GaN/Sapphire by LP-MOCVD

碩士 === 國立中山大學 === 電機工程學系研究所 === 92 === The materials based on GaN have successfully developed on short-wavelength laser diodes (LDs), light-emitting diodes (LEDs) and ultraviolet photodetector. In this study, GaN epitaxial layers have been successfully grown on sapphire substrates. We used several m...

Full description

Bibliographic Details
Main Authors: Chia-lin Chen, 陳佳麟
Other Authors: Ming-Kwei Lee
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/03947808996770307911