Influences of GaN Nucleation Layer on the Quality of GaN/Sapphire by LP-MOCVD
碩士 === 國立中山大學 === 電機工程學系研究所 === 92 === The materials based on GaN have successfully developed on short-wavelength laser diodes (LDs), light-emitting diodes (LEDs) and ultraviolet photodetector. In this study, GaN epitaxial layers have been successfully grown on sapphire substrates. We used several m...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2004
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Online Access: | http://ndltd.ncl.edu.tw/handle/03947808996770307911 |