Design and Application of 0.35um SiGe BiCMOS 5.2GHz Active Inductor
碩士 === 國立清華大學 === 電子工程研究所 === 92 === In this thesis, a 0.35μm SiGe BiCMOS gyrator cell active inductor has been designed and realized into circuit. In the first chapter, motivation and thesis organization is introduced. In Chapter 2, different types of inductor are discussed, including spiral induct...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99229318641389959525 |