Transmission Electron Microscopy Studies of InGaN/GaNMultiple Quantum Well Nano-Structures of Different SiliconDoping Conditions
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === In this research, we have investigated the nanostructures of InGaN/GaN multiple quantum wells (MQWs) with different indium concentrations, different silicon doping regions, and different silicon doping concentrations. We also studied the effects of post-growth t...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q79a3y |