Effects of Sol-Gel Preparation Conditions on the Properties of Sputter-Deposited Indium Tin Oxide Thin Films by Sol-Gel Derived Targets

• Main Authors: Yi-Chun Chen, 陳怡君
• Other Authors: Hsin-Chun Lu
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/82357438597391346124

碩士 === 長庚大學 === 化工與材料工程研究所 === 93 === The objectives of this research are to prepare sol-gel derived ITO targets as well as rf-sputtered ITO thin films and to investigate the effects of the precursor preparation conditions on the characteristics of the sols, the sol-gel derived ITO powders, targets and rf-sputtered thin films. In addition, the correlation between the precursor preparation conditions and the characteristics of these sol-gel derived materials and the corresponding mechanism were also investigated in the hope that the characteristics of these sol-gel derived materials can be improved through the control of the designed precursor preparation condition. From the experimental results, it is re-confirmed that the precursor preparation conditions indeed have impacts on the characteristics of sol gel derived ITO powders, targets, and re-sputtered thin films. It is also shown that ITO targets prepared from the precursor solutions with H+/M+ ratio of 0.69, methanol as solvent , and solution concentration 0.5M have better electrical properties. From the analyses of these sol-gel derived materials, the reasons for these observed property enhancements can be attributed to the improvements of the crystallinity and the amount of the replacement of indium in the lattice by tin of the sol-gel derived ITO powders, which lead to the increase of both the carrier concentration and the mobility in the sputtered thin films and, eventually, to the enhancement of thin film conductivity.