The Reliability Characterization and Acceleration Test Studies of InGaN-Based Light Emitting Diodes
碩士 === 正修科技大學 === 電子工程研究所 === 93 === In this thesis, InGaN based white LEDs were successfully fabricated by using metal organic chemical vapour deposition (MOCVD). In the process, p-GaN without and with surface roughness were epitaxial grown under normal temperature (10000C) and low temperature (800...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54418140121228044641 |