Investigation of GaAs-AlGaAs Based Schottky Diode- and Transistor-Type Hydrogen Sensors
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === The sensitive hydrogen detection of a field effect transistor, based on the gas-induced work function change at a specific gas-sensitive layer, was first presented in 1975. Today, the development of sensors is focused on new devices and materials with provi...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32476678792611833350 |