Liquid Phase Oxidation on GaAs for the Application to InGaP/GaAs HBTs Passivation
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === Liquid phase oxidation (LPO) method to grow native oxide films on InGaP/GaAs HBTs near room temperature is investigated and characterized. This is a very simple, low-cost and low-temperature (30-70oC) technique to grow uniform and smooth native oxide films...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03666267145935674230 |