The Fabrication and Characterization of PECVD-grown Si-rich SiOx based Metal-Oxide-Semiconducor Light Emitting Diode
碩士 === 國立交通大學 === 光電工程系所 === 93 === The difference between white and near-infrared electroluminescences (EL) of the metal-oxide-semiconductor diodes fabricated on 1100oC-annealed Si-rich SiOx/p-Si substrate with buried pyramid Si quantum dots (Si-QDs) are characterized. By changing the substrate te...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94083640317391706139 |