Study on Electrical Properties of Cu Interconnect with Novel Corrosion Inhibitors after Post CMP cleaning
碩士 === 國立交通大學 === 電子工程系所 === 93 === We know that the metal linewidth and spacing decreases with the device scaling, resulting in large RC time delay. Copper has been used as the interconnect material in the fabrication of advanced ultra-large scale integration circuit. The damascene process is regar...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/71713093393080648002 |