Characterization and Modeling of RF MOSFET’s Based on Four-Port Scattering-Parameter Measurement
博士 === 國立交通大學 === 電子工程系所 === 93 === With superior advancement of CMOS technologies, RF MOSFET’s have become an important candidate for the rapid growing wireless communication applications. Communication applications base on COMS technologies are potential to integrate the RF front end, base-band an...
Main Authors: | Shih-Dao Wu, 吳師道 |
---|---|
Other Authors: | Chun-Yen Chang |
Format: | Others |
Language: | en_US |
Published: |
2005
|
Online Access: | http://ndltd.ncl.edu.tw/handle/75800832058464116978 |
Similar Items
-
Characterization and Modeling of RF MOSFETs under
by: Dao-Yen Yang, et al.
Published: (2005) -
Study of Two-port De-embedding Method for Four-Terminal RF MOSFET and Model Parameter Extraction
by: 林宏霖
Published: (2005) -
Flicker Noise Characterization and Modeling for RF MOSFETs
by: Chih-Yuan Chan, et al.
Published: (2007) -
Small Signal Equivalent Circuit Models Development and Verification for Four-port RF MOSFET and New Cascode Structure with Merged Source Drain Diffusion
by: Chiu, De-Chang, et al.
Published: (2011) -
Characterization and Analysis for 65-nm RF MOSFETs
by: San-Chuan Chen, et al.
Published: (2008)