Electrical characterizations of InAsSb/GaAs self-assembled quantum dots
碩士 === 國立交通大學 === 電子物理系所 === 93 === The electrical and optical properties of InAsSb/GaAs self-assembled quantum dots are investigated by photoluminescence(PL), current-voltage (I-V), capacitance-voltage (C-V), admittance spectroscopy(C-F), deep-level transient spectroscopy(DLTS), and cross-sectional...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/42892352169555515598 |