| Summary: | 碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 94 === In this work, theoretical study of the transmission coefficients and the transport currents of nano-scale MOSFET under the action of twist fields, based on the finite element approach and the multi-channel transfer-matrix method, is presented. In model structure, the carrier is confined in both transverse directions (x- and z-directions), but transport in y-direction. Regardless of the size of devices, the twist field usually exists in the systems due to the interplay of drain bias and fringe effect of gate capacitor. The twist field causes an elastic scattering when the carrier tunnels through the conducting channel. In long-channel devices, the influence of this scattering effect in devices is difficult to distinguish from other effects, such as impurity, phonon, defect, and surface-roughness scatterings. However, the twist field scattering becomes significant in ultra-short channel devices, especially, in ballistic transport regime, where the channel length is smaller than the mean free path of carriers.
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