Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs
碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === In this study, a low contact resistivity Pd/Ge/Cu ohmic contact to n-type GaAs has been successfully developed. The Au-free fully Cu-metallized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs also has been successfully fabricated for the first time....
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27606966960858836731 |