A Study of Drive Current Enhancement Methods and Related Reliability Issues for MOSFETs
博士 === 國立交通大學 === 電子工程系所 === 94 === In this thesis, we have investigated the impacts of silicon nitride (SiN) capping layer on drive current and the associated reliability issues. In addition, novel SOI devices were also fabricated and characterized in this study. This study includes the fabrication...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33162682263092973012 |