Three Terminal and Four Terminal RF MOSFET Model Parameter Extraction Methods Development and Verification by Equivalent Circuit Simulation
碩士 === 國立交通大學 === 電子工程系所 === 94 === Parameter extraction method development is very important for accuracy of simulation. In the past, foundries always provide customers with the 3T sample layout, whose source and body terminals are connected together. But foundries tend to provide customers with 4T...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01478305174414679454 |