The device fabrication and performance characterization on sub-micron GaN HEMT
博士 === 國立中央大學 === 電機工程研究所 === 94 === The AlGaN/GaN hetrostructure has been announced in 1991, and it has also been proven that the electron mobility of 2DEG could be indeed enhanced. Then the first GaN MESFET was delivered in 1993, and the first GaN HEMT was also fabricated in 1996, too. It is inter...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/xh53my |