Fabrication of dual-metal gate oxide layer－HfTiOx with low temperature anodization to fabricate MIS capacitantor and high-k gate oxide MOSFET
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所 === 94 === In this research, high-k oxide MIS capacitor and high-k gate oxide MOSFETs are prepared. First, we use RF sputtering system to deposit Hf and Ti metal on n-type ( 100 ) silicon substrate, and then used anodization to make the metal, both Hf and Ti , change i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01983132553173139054 |