| Summary: | 碩士 === 逢甲大學 === 化學工程學所 === 95 === In this study, the usage of the self-assembled new material abrasive (PS@CeO2) replaced the Al2O3 abrasive using in Copper Chemical Mechanical Polishing (CMP). The slurry improved the scratches incurred during the process of polishing. We also inquired into the additive to the influence upon removal rate and the surface flatness.
With the equipment of abrasive (PS@CeO2), on the aspect of the core particle, polystyrene was made from emulsion polymerization, had the advantages of having spherical shape, narrow size distribution, and good dispersion. And by using layer-by-layer (LBL) technique to make cerium oxide (CeO2) shell, it increased the hardness of the organic particles. After measuring the products with SEM, it was discovered that the shape was spherical and the surface was coarser after LBL.
In polishing experiments which was found the smaller material abrasive, the higher solid content and concentration of citric acid, and acidity aqua could enhance the removal rate. In too high concentration of oxidant and neutral aqua would decrease the removal rates. From the DFM results, it was found that using abrasive of PS@CeO2 did not cause surface scratches. In neutral condition and in recipe of 9 vol% H2O2, 1 wt% abrasive of PS@CeO2 and 0.0078 M citric acid were helped with surface flattening. These results could see a good space for development on the CMP with applications of core–shell composite application.
|
|---|
