The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Nanocrystalline silicon (nc-Si) film has higher mobility than amorphous silicon film to elevate the current driving ability and can be uniformly deposited at low temperature (250℃), thus was employed to prepare thin film transistor (TFT) for large area displ...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52850272008541761280 |