The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Nanocrystalline silicon (nc-Si) film has higher mobility than amorphous silicon film to elevate the current driving ability and can be uniformly deposited at low temperature (250℃), thus was employed to prepare thin film transistor (TFT) for large area displ...
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ndltd-TW-095NCKU54280432015-10-13T14:16:10Z http://ndltd.ncl.edu.tw/handle/52850272008541761280 The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition 熱鎢絲化學氣相低溫沉積高性能奈米晶矽薄膜電晶體之研究 Pao-Tung Chen 陳保同 碩士 國立成功大學 微電子工程研究所碩博士班 95 Nanocrystalline silicon (nc-Si) film has higher mobility than amorphous silicon film to elevate the current driving ability and can be uniformly deposited at low temperature (250℃), thus was employed to prepare thin film transistor (TFT) for large area display applications. In this work, the hot-wire chemical vapor deposition (HWCVD) was used to prepare TFT for its feature of low temperature and high deposition rate. We analyzed the influence of deposition conditions such as film thickness, with and without a buffer layer, and thermal annealing on characteristics of the film through FESEM, AFM, XRD, FTIR, and I-V curve measurements. Besides, we successfully fabricate the high performance nc-Si TFTs with various structure such as different gate oxide thicknesses, with and without a buffer layer, various layer number for the layer-by-layer process, and different n+ layer structures. The best performance of the developed nc-Si TFT are 6.3×10-11 (A) for leakage current, 2.5×10-5 (A) for device driving on current, ~106 for on/off current ratio , and 18.58 (cm2/Vs) for drift mobility. Yean-Kuen Fang 方炎坤 2007 學位論文 ; thesis 130 zh-TW |
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碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Nanocrystalline silicon (nc-Si) film has higher mobility than amorphous silicon film to elevate the current driving ability and can be uniformly deposited at low temperature (250℃), thus was employed to prepare thin film transistor (TFT) for large area display applications.
In this work, the hot-wire chemical vapor deposition (HWCVD) was used to prepare TFT for its feature of low temperature and high deposition rate. We analyzed the influence of deposition conditions such as film thickness, with and without a buffer layer, and thermal annealing on characteristics of the film through FESEM, AFM, XRD, FTIR, and I-V curve measurements. Besides, we successfully fabricate the high performance nc-Si TFTs with various structure such as different gate oxide thicknesses, with and without a buffer layer, various layer number for the layer-by-layer process, and different n+ layer structures. The best performance of the developed nc-Si TFT are 6.3×10-11 (A) for leakage current, 2.5×10-5 (A) for device driving on current, ~106 for on/off current ratio , and 18.58 (cm2/Vs) for drift mobility.
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author2 |
Yean-Kuen Fang |
author_facet |
Yean-Kuen Fang Pao-Tung Chen 陳保同 |
author |
Pao-Tung Chen 陳保同 |
spellingShingle |
Pao-Tung Chen 陳保同 The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition |
author_sort |
Pao-Tung Chen |
title |
The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition |
title_short |
The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition |
title_full |
The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition |
title_fullStr |
The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition |
title_full_unstemmed |
The Study of High Performance Nanocrystalline Silicon Thin Film Transistor Prepared by Hot-Wire Chemical Vapor Deposition |
title_sort |
study of high performance nanocrystalline silicon thin film transistor prepared by hot-wire chemical vapor deposition |
publishDate |
2007 |
url |
http://ndltd.ncl.edu.tw/handle/52850272008541761280 |
work_keys_str_mv |
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