Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices
碩士 === 國立交通大學 === 電子工程系所 === 95 === Abstract. The remote Coulomb scattering (RCS) induced mobility degradation in advanced VLSI devices is investigated. Mobility degradation in HK dielectric MOSFETs is observed. By two-frequency charge pumping method, we show that the mobility degradation is caused...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46699028835799800777 |
| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 95 === Abstract.
The remote Coulomb scattering (RCS) induced mobility degradation in advanced VLSI devices is investigated. Mobility degradation in HK dielectric MOSFETs is observed. By two-frequency charge pumping method, we show that the mobility degradation is caused from the HK bulk traps. An analytical equation for RCS mobility is calculated to simulate the RCS effect. By using SONOS FN programming, we confirm that the mobility will by reduced by RCS. Our result shows that mobility will be severely limited by RCS as interfacial oxide thickness (IOT) scaling.
Try to know that how RCS effect affects random telegraph signal (RTS) noise, the RTS noise is characterized in SONOS flash memories. By controlling program window, the RTS noise at different program window is observed in SONOS flash memories. The amplitude of RTS at larger program window is smaller. The detailed model is still puzzling and needed more investigation.
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