| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 95 === In this thesis, we develop an efficient model for carrier calculation. This model is based on the Fermi-Dirac integral, and we build a table to implement device simulation for any carrier concentration versus Fermi energy. No numerical integral is needed in the new model. And we use New Variable to raise efficient in Table Method, it can reduce the frequency for table look-up. Moreover, we apply our model to the MOSFET that allows high doping in the source, drain and substrate regions. Furthermore, we use the developed model to discuss the current analytical of PN diode and MOSFET to understand the difference between Fermi-Dirac integral and Boltzmann approximation.
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