Temperature dependence of large-signal model of pHEMTs
碩士 === 國立中央大學 === 電機工程研究所 === 95 === GaAs pHEMT device is one of the most important semiconductor devices for military and commercial communication applications at millimeter-wave frequencies. It is very important to accurately model the dc and high frequency characteristics of the transistors befor...
Main Authors: | Cheng-Hung Hsieh, 謝政宏 |
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Other Authors: | 辛裕明 |
Format: | Others |
Language: | zh-TW |
Published: |
2007
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Online Access: | http://ndltd.ncl.edu.tw/handle/17929401100697126813 |
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