| Summary: | 碩士 === 國立中央大學 === 光電科學研究所 === 95 === In recent years, low temperature polycrystalline silicon(LTPS) attracted much attention. In this work, we investigated the effect of different silicon deposition techniques, including e-beam evaporation and RF magnetron sputtering during the process of aluminum-induced crystallization(AIC) of a-Si. First, Al layers were deposited on glass substrates at room temperature by the resistive heator. Then a-Si layers were deposited on Al layers by e-beam evaporation or RF magnetron sputtering to make glass/Al/a-Si samples. The samples were annealed in a furnace and analyzed how different annealing temperature and time influenced a-Si crystallization.
The results revealed that under the same annealing time (12 hours), the procedure of a-Si prepared by e-beam evaporation(＞500℃) had higher annealing temperature than the procedure of a-Si prepared by RF magnetron sputtering(＞400℃) to make crystalline silicon which had preferred orientation(111). Furthermore, at the same annealing temperature(550℃), the procedure of a-Si prepared by e-beam evaporation(＞30 min) had longer annealing time than the procedure of a-Si prepared by RF magnetron sputtering(＞10min) to make crystalline silicon.
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