Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system

• Main Authors: Chia-Sheng Sheu, 許加昇
• Other Authors: Day-Shan Liu
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/629pgy

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 95 === Al-N codoped zinc oxide films were prepared using a radio-frequency magnetron cosputtering system using AlN and ZnO targets at room temperature. The as-deposited cosputtered films at various theoretical atomic ratios [Al / (Al + Zn) at.%] showed n-type conductive behavior in spite of the N atoms exceeding that of the Al dopants, indicating that the N-related acceptors were still inactive. The crystalline structure was obviously correlated with the cosputtered AlN contents and eventually evolved into an amorphous structure for the Al-N codoped ZnO film at a theoretical Al doping level reaching 60%. With an adequate post-annealing treatment, the N-related acceptors were effectively activated and the p-type ZnO conductive behavior achieved. The appearance of the Zn3N2 phase in the X-ray diffraction pattern of the annealed Al-N codoped ZnO film provided evidence of N impurity activation. The red-shift of the shallow level transition and the apparent suppression of the oxygen-related deep level emission investigated from the PL spectrum measured at room temperature were concluded to be influenced by these activated N-related acceptors. In addition, the activation of the N acceptors denoted as N-Zn bond and the chemical bond related to the Zn3N2 crystalline structure were also observed from the associated XPS spectra.