Using anodic oxidation to fabricate dual-metal gate oxide layer－HfTiOx of MIS capacitor with different gate metals and MOSFET with device encapsulation
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所 === 95 === In this research, effects of dual-metal gate oxide layer－HfTiOx on MIS capacitor with different gate metals are studied first. We use RF sputtering to deposit Hf and Ti metal layers on n-type (100) Si substrate, and then use anodic oxidation to transfer them...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95942910500439990710 |