The Investigation of High Breakdown Voltage AlGaN/GaN HEMT with Field-Plate Technology
碩士 === 長庚大學 === 電子工程學研究所 === 96 === Pr2O3 high-k dioxide replacement materials have been demonstrated as the gate dielectric materials in AlGaN/GaN HEMT. The dielectric constant of and Pr2O3 are about 9.78 which provide a high channel control ability in FET. In this study, we are particularly intere...
| Main Authors: | , |
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| Format: | Others |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/p856b9 |