Simulation of the characteristic of ZnS Light-Emitting Diodes Vertial and Lateral Structures
碩士 === 逢甲大學 === 化學工程學所 === 96 === The photoelectric characteristics of ZnS LEDs in vertial and lateral structure have been compared by the simulation softwave, COMSOL Multiphysics. Under 5 V forward bias, we have found that the optimum thickness of the active layer is 200 nm for both structures. And...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26460598473455607572 |