| Summary: | 碩士 === 華梵大學 === 電子工程學系碩士班 === 96 === In this study, the extended-gate field effect transistors of the Sputter TiO2/ITO Glass, Sol-gel TiO2/ITO Glass and Sol-gel TiO2/ITO PET were applied to fabricate the durable ammonium ion selective electrodes. The potentiometric solid-state urea biosensor prepared by immobilization of urease directly onto the surface of an ammonium ion-selective electrode is described. The substrate of the ammonium ion-selective electrodes include TiO2 / ITO Glass, TiO2 / ITO PET and the enzyme was immobilized by entrapment method on a nonactin membrane incorporated carboxylated polyvinylchloride (PVC-COOH).
The experimental results show that the optimized measurement environment of the ammonium ion selective electrode was in 0.5mM Tris /EDTA pH 7.5 and the best response curves can be gotten. The ammonium ion selective electrodes were measured in the ammonium buffer solution, concentration range from 10-7M ~ 1 M. The sensitivity is Sputter TiO2/ITO Glass about 46.31 mV/decade, Sol-gel TiO2/ITO Glass about 37.2 mV/decade, and Sol-gel TiO2/ITO PET 36.6 mV/decade in the linear range, respective.
In addition, the ammonium ion selective electrode must emphasize its stability and reproducibility mechanism, the emphasis of the ion selective electrode also included the ion interference. The optimize measurement environment to fabricate a stable ammonium selective electrode was found. In experiment by each ten of the Sputter TiO2/ITO Glass, Sol-gel TiO2/ITO Glass and Sol-gel TiO2/ITO PET were observed in each ammonium ion concentration to study the response voltage of reproducibility. They showed Sputter TiO2/ITO Glass good sensitivity about 41~55 mV/decade, Sol-gel TiO2/ITO Glass sensitivity is about 35~45 mV/decade and Sol-gel TiO2/ITO PET sensitivity is 35~45 mV/decade. The corresponding average values are Sputter TiO2/ITO Glass about 49.8 mV/decade, Sol-gel TiO2/ITO Glass about 41.4 mV/decade and Sol-gel TiO2/ITO PET about 40.1 mV/decade.
Keywords: Ammonium Ion Selective Electrode, Separated Extended-gate Field Effect Transistor, Titanium dioxide, reproducibility
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