Small signal and noise model with scaling effect of pHEMTs
碩士 === 國立中央大學 === 電機工程研究所 === 96 === GaAs pHEMT device is one of the most important semiconductor devices for military and commercial communication applications at millimeter-wave frequencies. It is very important to set up an accurately model which contains the high frequency and noise characterist...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46z3b9 |