characterization and Analysis of InGaASb Base Heterojunction Bipolar Transistors

• Main Authors: Hsin-Yuan Chen, 陳馨媛
• Other Authors: Jen-Inn Chyi
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/cth3s4

碩士 === 國立中央大學 === 電機工程研究所 === 96 === This thesis reports the characterization of InxGa1-xAs1-ySby epilayers and InP/InxGa1-xAs1-ySby/InGaAs double heterojunction bipolar transistors (DHBTs) grown on InP by solid-source molecular beam Epitaxy. InxGa1-xAs1-ySby bulk layers of difference Sb content are prepared and characterized by high resolution X-ray diffraction, photoluminescence and Hall measurements so as to examine their electronic, electrical as well as structural properties. As to the InP/In0.37Ga0.63As0.88Sb0.12/In0.53Ga0.47As DHBTs, low forward turn-on voltages as low as 0.35 V are obtained. Such a low turn-on voltage is much lower than the 0.5 V for conventional InP/In0.53Ga0.47As HBTs. Through temperature-dependent Gummel plots, photoluminescence and x-ray diffraction, the reduced turn-on voltage is attributed to the small energy band gap of InxGa1-xAs1-ySby base, the reduced conduction band offset of emitter/base junction and the residual tensile strain in the base. In addition, the current gain is also improved by the resultant emitter/base type-I band line-up, especially at the low current region. The work shows the great potential of InxGa1-xAs1-ySby DHBTs for low-power, high-speed circuit applications.