InGaAsSb base HBT fabrication and analysis
碩士 === 國立中央大學 === 電機工程研究所 === 96 === Bandgap engineering is an important and effective way to increase thecurrent density and current gain cut-off frequency (fT) in the development of THz transistors. The year before last, a new heterojunction bipolar transistor (HBT) with InGaAsSb base was proposed...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/35mpys |