The Ultrafast Time-resolved Photoluminescence Study of InN Thin Films
碩士 === 國立中山大學 === 物理學系研究所 === 96 === The carrier dynamics of Indium Nitride thin films has been studied by the ultrafast time-resolved photoluminescence upconversion. The silicon-doped InN thin films were grown on GaN buffers and sapphire substrates with the background carrier densities of varies fr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/y38d5r |