The Ultrafast Time-resolved Photoluminescence Study of InN Thin Films
碩士 === 國立中山大學 === 物理學系研究所 === 96 === The carrier dynamics of Indium Nitride thin films has been studied by the ultrafast time-resolved photoluminescence upconversion. The silicon-doped InN thin films were grown on GaN buffers and sapphire substrates with the background carrier densities of varies fr...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/y38d5r |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 96 === The carrier dynamics of Indium Nitride thin films has been studied by the ultrafast time-resolved photoluminescence upconversion. The silicon-doped InN thin films were grown on GaN buffers and sapphire substrates with the background carrier densities of varies from 6.16×1018 cm-3 to 1.27×1020 cm-3. This thesis found that as the background increases, the peak energy of the photoluminescence of the InN samples exhibits blue shift, the decay time decreases, and the emission time of the effective longitudinal optical phonon by carriers increases from 358 to 775 fs. The studies of InN thin films which were grown on r-plane substrate without buffer layers indicate that the decay time as well as the LO phonon emission time of the zinc-blende InN are shorter than those of the wurtzite InN. The large number of defect states in the wurtzite structure and highly doped InN thin films is attributed to the fast decay time and long LO phonon emission time.
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