Fabrication and Characterization of Gallium Nitride Micron-scale Triangular Structure Light-emitting Diode
碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === The fabrication and characterization of InGaN/GaN light-emitting diode are investigated in this thesis. First, we discuss the characteristics of native gallium oxide layer grown by photoelectrochemical (PEC) oxidation. The photoluminescence (PL) enhancement of P...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68787489026835418033 |