Effect of Tensile-stress on MOS Capacitors with Rapid Thermal Ultra-Thin Gate Oxides
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === As MOS devices are scaled down to achieve high performance, the thicknesses of silicon dioxides are also scaled down. Besides, the growth temperature of thermal ultra-thin oxides is reduced to obtain better control. This trend results in gate leakage current inc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98024119639421053379 |