Group IV Element Metal-Oxide-Semiconductor Light Emitting Devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === In this thesis, various metal-oxide-semiconductor light-emitting-devices (MOS LED) were fabricated and investigated of their luminescence characteristics. The MOS LED structures include the Ge MOS LED with silicon dioxide (SiO2), Ge MOS LED with aluminum oxide (...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/62421984380314050293 |